Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3M SiC MOSFET technlogy • High Blocking Voltage with Low RDS(on) • Easy to parallel and simple to drive • Resistant to Latch-up Benefits • Higher System Efficiency • Low Conduction Losses over Temperature • Reduced Cooling Requirements • Increased System Switching Frequency A

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1700 V Industrial Qualified Bare Die Silicon Carbide MOSFETs – Gen 3

Industrial QualifiedHigh blocking voltage with industry leading low RDS(on) over temperature stabilityResistant to latch-upHigh gate resistance for drives • Industrial Qualified\n• High blocking voltage with industry leading low RDS(on) over temperature stability\n• Resistant to latch-up\n• High gate resistance for drives;

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