MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

Features • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] • 1.8V drive. [SBD] • Short reverse recovery time. • Low forward voltage.

文件：69.95 Kbytes 页数：6 Pages

SANYO

三洋

P-Channel 20-V (D-S) MOSFET With Schottky Diode

文件：132.49 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

P-Channel 1.8-V (G-S) MOSFET With Schottky Diode

文件：86.13 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

P-Channel 1.8-V (G-S) MOSFET With Schottky Diode

文件：101.52 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司