N-Channel Silicon MOSFET, Schottky Barrier Diode, General-Purpose Switching Device Applications

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance • Ultrahigh-speed switching • 2.5V driv

文件：71.85 Kbytes 页数：5 Pages

SANYO

三洋

N-Channel Silicon MOSFET, Schottky Barrier Diode, General-Purpose Switching Device Applications

ONSEMI

安森美半导体

Silicon Power Rectifier Diode, 12 Amp

Description: The NTE5810, NTE5811, and NTE5870 through NTE5891 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls. Features: • High Surge Current Capability • High Voltage Available

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NTE

Photo Transistor

Features • Lensed for high sensitivity • φ5mm(T-13/4) all plastic mold type • High reliability and stable characteristics • Visible light cut-off type • With base terminal

文件：95.45 Kbytes 页数：4 Pages

AUK

POWER ZENERS

DESCRIPTION Fused-in-glass, metallurgically-bonded 5 watt zeners. FEATURES • 2 Times Greater Surge Rating than Conventional 10 Watt Zeners • Small Physical Size

文件：109.92 Kbytes 页数：2 Pages

MICROSEMI

美高森美