High-Current Switching Applications

High-Current Switching Applications Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). • High allowable power diss

文件：48.52 Kbytes 页数：5 Pages

SANYO

三洋

Bipolar Transistor, (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single CPH6

CPH6123 is Bipolar Transistor, (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single CPH6 for High-Current Switching Applications. • Adoption of MBIT process\n• Low collector-to-emitter saturation voltage\n• Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm)\n• High allowable power dissipation\n;

ONSEMI

安森美半导体

Bipolar Transistor (.)50V, (.)3A, Low VCE(sat), (PNP)NPN Single CPH6

Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) • High allowable power dissipation Applications • DC-DC converters, r

文件：602.74 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Bipolar Transistor

文件：602.74 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Package：SC-74，SOT-457；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 3A 6CPH

ONSEMI

安森美半导体