P-Channel Silicon MOSFET General-Purpose Switching Device

Features • Low ON-resistance. • High-speed switching. • 1.8V drive.

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SANYO

三洋

P-Channel Silicon MOSFET General-Purpose Switching Device

ONSEMI

安森美半导体

20V N & P-Channel PowerTrench MOSFETs

General Description The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional pow

文件：93.06 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

6 / 4 CHANNEL VOLTAGE SENSE GMR PREAMPLIFIER

DESCRIPTION L6327/L6332 is a BICMOS monolithic integrated circuit GMR differential preamplifier designed for use with four-terminal magneto-resistive GMR read/inductive write heads. It is available as either a six (L6327) or four (L6332) channel device. The devices consist of a voltage-sense, cur

文件：60.08 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

3-Pin, Ultra-Low-Voltage, Low-Power 關P Reset Circuits

General Description The MAX6332/MAX6333/MAX6334 microprocessor (µP) supervisory circuits monitor the power supplies in 1.8V to 3.3V µP and digital systems. They increase circuit reliability and reduce cost by eliminating external components and adjustments. Features ♦ Ultra-Low 0.7V Operating S

文件：97.8 Kbytes 页数：6 Pages

MAXIM

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