FDG6332C中文资料仙童半导体数据手册PDF规格书

General Description

The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.

Features

• Q1 0.7 A, 20V.

RDS(ON) = 300 mW @ VGS = 4.5 V

RDS(ON) = 400 mW @ VGS = 2.5 V

• Q2 –0.6 A, –20V.

RDS(ON) = 420 mW @ VGS = –4.5 V

RDS(ON) = 630 mW @ VGS = –2.5 V

• Low gate charge

• High performance trench technology for extremely low RDS(ON)

• SC70-6 package: small footprint (51 smaller than

SSOT-6); low profile (1mm thick)

Applications

• DC/DC converter

• Load switch

• LCD display inverter