FDG6332C中文资料PDF规格书
FDG6332C规格书详情
General Description
The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.
Features
• Q1 0.7 A, 20V.
RDS(ON) = 300 mW @ VGS = 4.5 V
RDS(ON) = 400 mW @ VGS = 2.5 V
• Q2 –0.6 A, –20V.
RDS(ON) = 420 mW @ VGS = –4.5 V
RDS(ON) = 630 mW @ VGS = –2.5 V
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• SC70-6 package: small footprint (51 smaller than
SSOT-6); low profile (1mm thick)
Applications
• DC/DC converter
• Load switch
• LCD display inverter
产品属性
- 型号:
FDG6332C
- 功能描述:
MOSFET 20V N&P-Channel Power Trench
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
2021/2022+ |
NA |
8000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | ||
VBsemi |
21+ |
SC70-6 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
FAICHILD |
23+ |
SC70-6 |
20000 |
原厂原装正品现货 |
询价 | ||
ON/安森美 |
22+ |
N/A |
10000 |
挂了就有,代理分销,TW价优 |
询价 | ||
ON/安森美 |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
FAIRCHILD |
2017 |
NA |
20 |
全新原装!优势库存热卖中! |
询价 | ||
Fairchild/ON |
21+ |
SC706 |
13880 |
公司只售原装,支持实单 |
询价 | ||
ON/安森美 |
20+ |
SC70-6 |
3430 |
原装现货 |
询价 | ||
ON/安森美 |
19+ |
SC70-6 |
48880 |
询价 | |||
ON/安森美 |
21+ |
SC70-6 |
10000 |
全新原装 公司现货 价格优 |
询价 |