FDG6321C中文资料仙童半导体数据手册PDF规格书
FDG6321C规格书详情
General Description
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
特性 Features
■ N-Ch 0.50 A, 25 V, RDS(ON) = 0.45 Ω @ VGS= 4.5V. RDS(ON) = 0.60 Ω @ VGS= 2.7 V.
■ P-Ch -0.41 A, -25 V,RDS(ON) = 1.1 Ω @ VGS= -4.5V. RDS(ON) = 1.5 Ω @ VGS= -2.7V.
■ Very small package outline SC70-6.
■ Very low level gate drive requirements allowing direct operation in 3 V circuits(VGS(th) < 1.5 V).
■ Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
产品属性
- 型号：
FDG6321C
- 功能描述：
MOSFET SC70-6 COMP N-P-CH
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAICHILD |
24+ |
SC70-6 |
18560 |
假一赔十全新原装现货特价供应工厂客户可放款 |
询价 | ||
ON |
24+ |
SOT-323-6 |
5000 |
全新原装正品,现货销售 |
询价 | ||
ON(安森美) |
2511 |
6-TSSOP,SC-88,SOT-363 |
8484 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
ON/安森美 |
23+ |
SC70-6 |
50000 |
只做原装正品 |
询价 | ||
ON/安森美 |
24+ |
SC70-6 |
9000 |
代理货源假一赔十 |
询价 | ||
ON |
24+ |
SC70-6 |
15000 |
原装原标原盒 给价就出 全网最低 |
询价 | ||
ON |
15+ |
SC70-6 |
6736 |
原装 |
询价 | ||
ON/安森美 |
22+ |
SOT-323-6 |
6000 |
原装正品 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
24+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 |
