High-Speed Switching Applications

Features • Low ON-resistance. • High-speed switching. • 4V drive.

文件：45.82 Kbytes 页数：4 Pages

SANYO

三洋

Medium Output MOSFETs

ONSEMI

安森美半导体

EMI Filter with ESD Protection for MicroSD Card Applications

文件：190.92 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –0.7 A, –12 V. RDS(ON) = 270 mΩ @ VGS = –4.5 V RDS(ON) = 360 mΩ @ VGS = –2.5 V RDS(ON) = 650 mΩ @ VGS =

文件：149.58 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –0.7 A, –12 V. RDS(ON) = 270 mΩ @ VGS = –4.5 V RDS(ON) = 360 mΩ @ VGS = –2.5 V RDS(ON) = 650 mΩ @ VGS =

文件：149.58 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体