High-Frequency Low-Noise Amplifier Applications

Features • High gain : |S21e|2=11dB typ (f=1GHz). • High cutoff frequency : fT=6.7GHz typ. • Small and slim 6-pin package. • Large allowable collector dissipation (800mW max).

文件：47.23 Kbytes 页数：6 Pages

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三洋

NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications

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安森美半导体

RF Transistor

Features • High gain : |S21e|2=11dB typ (f=1GHz) • High cut-off frequency : fT=6.7GHz typ • Small and slim 6-pin package • Large allowable collector dissipation (800mW max)

文件：487.63 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications

Features • High gain : |S21e|2=11dB typ (f=1GHz) • High cut-off frequency : fT=6.7GHz typ • Small and slim 6-pin package • Large allowable collector dissipation (800mW max)

文件：58.13 Kbytes 页数：6 Pages

SANYO

三洋

RF Transistor

Features • High gain : |S21e|2=11dB typ (f=1GHz) • High cut-off frequency : fT=6.7GHz typ • Small and slim 6-pin package • Large allowable collector dissipation (800mW max)

文件：487.63 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

High-Frequency Low-Noise Amplifier Applications

文件：495.65 Kbytes 页数：8 Pages

SANYO

三洋

High-Frequency Low-Noise Amplifier Applications

文件：495.65 Kbytes 页数：8 Pages

SANYO

三洋

射频晶体管，12 V，100 mA，fT = 6.7 GHz

CPH6001A is RF Transistor, 12 V, 100 mA, fT = 6.7 GHz, NPN Single CPH6 for high frequency, low noise amplifier applications. • High gain : Forward Transfer Gain=11dB typ (f=1GHz)\n• High cut-off frequency : fT=6.7GHz typ\n• Small and slim 6-pin package\n• Large allowable collector dissipation : 800mW(max);

ONSEMI

安森美半导体

Package：SOT-23-6 细型，TSOT-23-6；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 12V 6.7GHZ 6CPH

ONSEMI

安森美半导体

包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 12V 6.7GHZ PCP

ONSEMI

安森美半导体