Bipolar Transistor -12V, -3A, Low VCE(sat), PNP Single CPH6

Features • Adoption of MBIT process • High current capacitance • Low collector-to-emitter saturation voltage • High speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm) • High allowable power dissipation Applications • Relay drivers, lamp dri

文件：535.59 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

DC / DC Converter Applications

Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm). • High allowable power dissipation. Applications • Relay drivers, la

文件：53.3 Kbytes 页数：4 Pages

SANYO

三洋

Bipolar Transistor -12V, -3A, Low VCE(sat), PNP Single CPH6

ONSEMI

安森美半导体

Bipolar Transistor -12V, -3A, Low VCE(sat), PNP Single CPH6

Features • Adoption of MBIT process • High current capacitance • Low collector-to-emitter saturation voltage • High speed switching • Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm) • High allowable power dissipation Applications • Relay drivers, lamp dri

文件：535.59 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Package：SC-74，SOT-457；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 12V 3A 6CPH

ONSEMI

安森美半导体