TRANSHIELLD CP2000 SERIES

文件：272.03 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

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TRANSHIELLD CP2000 SERIES

文件：272.03 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

TRANSHIELLD CP2000 SERIES

文件：272.03 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

TRANSHIELLD CP2000 SERIES

文件：272.03 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

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Power Transistor NPN - High Current Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 82 x 82 MILS Die Thickness 11 MILS Base Bonding Pad Area 13.2 x 19.7 MILS Emitter Bonding Pad Area 13.2 x 21.2 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

文件：211.65 Kbytes 页数：2 Pages

CENTRAL

TRANSHIELLD CP2000 SERIES

文件：272.03 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

TRANSHIELLD CP2000 SERIES

文件：272.03 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Small Signal Transistor

PROCESS DETAILS Process EPITAXIAL BASE Die Size 39.5 X 39.5 MILS Die Thickness 9.8 MILS Base Bonding Pad Area 3.9 x 5.1 MILS Emitter Bonding Pad Area 7.9 x 3.9 MILS Top Side Metalization Al - 24,000Å Back Side Metalization Au - 12,000Å

文件：208.25 Kbytes 页数：2 Pages

CENTRAL

丝印：A15；Package：CSP9；3W, Mono, Ultra-Low EMI, Filterless, Class-D Audio Power Amplifier with Spread Spectrum

General Description The CP2215 is a high efficiency, mono, filterless, Class D audio power amplifier with spread spectrum designed for demanding audio applications. An advanced spread spectrum modulation reduces EMI and eliminates output filter. It is capable of delivering 3W of continuous av

文件：192.76 Kbytes 页数：3 Pages

CHIPHOMER

启攀微电子

Small Signal Transistor NPN - RF Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 22 x 22 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 3.5 MILS DIAMETER Emitter Bonding Pad Area 3.5 x 3.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å

文件：194.88 Kbytes 页数：2 Pages

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