CMBT9014T/-W说明书PDF资料库存现货第4页-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IRFL9014	文件：222.81 Kbytes Page：8 Pages	PowerMOSFET(Vdss=-60V,Rds(on)=0.50ohm,Id=-1.8A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFL9014	文件：1.03697 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFL9014	文件：177.41 Kbytes Page：8 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFL9014	文件：174.72 Kbytes Page：8 Pages	PowerMOSFET FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •P-channel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgenerationpower	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFL9014	文件：790.32 Kbytes Page：8 Pages	RepetitiveAvalancheRated Description TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechniques.Itsuniquepackagedesignallowsforeasyautomaticpick-andplaceaswithotherSOTorSOICpackagesbuthastheaddedadvantageofimprovedthermalperformanceduetoanenla	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFL9014PBF	文件：258.22 Kbytes Page：8 Pages	HEXFET짰PowerMOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFL9014PBF	文件：1.03697 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFL9014TR	文件：1.03697 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFL9014TRPBF	文件：1.03697 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFL9014TRPBF	文件：1.68613 Mbytes Page：7 Pages	P-Channel60-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100UISTested APPLICATIONS •LoadSwitch	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
IRFL9014TRPBFA	文件：174.72 Kbytes Page：8 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR9014	文件：321.35 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRFR9014	文件：1.16375 Mbytes Page：13 Pages	PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surfacemount(IRFR9014,SiHFR9014) •Straightlead(IRFU9014,SiHFU9014) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR9014	文件：2.62994 Mbytes Page：5 Pages	P-ChannelEnhancementModeMOSFETl Features *Vos=60V=-13A Rosion100mQ@Ves=10V Rosion110mQ@Vos=-4.5V(TYP)	TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司	TECHPUBLIC
IRFR9014	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014	文件：177.68 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-60V,Rds(on)=0.50ohm,Id=-5.1A) Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9014) •StraightL	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFR9014	文件：188.89 Kbytes Page：6 Pages	HEXFETPowerMOSFET Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9014) •StraightL	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFR9014	文件：306.39 Kbytes Page：5 Pages	P-CHANNELPOWERMOSFETS FEATURES •LowerRDS(ON) •Improvedinductiveruggedness •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowerinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability	SamsungSamsung Group 三星三星半导体	Samsung
IRFR9014	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
IRFR9014PBF	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半导体	Vishay

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详细参数

型号：
CMBT9014T/-W
功能描述：
两极晶体管 - BJT NPN Gen Pur
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
PNP 集电极—基极电压
VCBO：
集电极—发射极最大电压
VCEO：
- 40 V 发射极 - 基极电压
VEBO：
- 6 V
增益带宽产品fT：
直流集电极/Base Gain hfe
Min：
100 A
安装风格：
SMD/SMT
封装/箱体：
PowerFLAT 2 x 2

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市鹏和科技有限公司	CMBT918	CERTIRED	24+	SOT-23SC-59	5000	只做原装公司现货	询价
深圳市威尔健半导体有限公司	CMBT918	CERTIRED	23+	SOT-23SC-59	50000	全新原装正品现货,支持订货	询价
深圳市汇莱威科技有限公司	CMBT918		CERTIRED	SOT-23SC-59	68900	原包原标签100%进口原装常备现货!	询价
深圳廊盛科技有限公司	CMBT918	CERTIRED	22+	SOT-23SC-59	50000	只做原装假一罚十,欢迎咨询	询价
深圳市得捷芯城科技有限公司	CMBT918	CERTIRED	23+	NA/	115240	原装现货,当天可交货,原型号开票	询价
深圳市纳立科技有限公司	CMBTA05LT1G		三年内		1983	纳立只做原装正品13590203865	询价
深圳市惊羽科技有限公司	CMBTA06	RECTRON-瑞创	24+25+/26+27+	车规-元器件	236148	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市振宏微科技有限公司	CMBTA42	CDIL	23+	NA	3486	专做原装正品,假一罚百!	询价
贸泽芯城（深圳）电子科技有限公司	CMBTA42	CENTRAL	21+ROHS	SOT-23	1726000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市一线半导体有限公司	CMBTA42C1D	CENTRAL	2008++	SOT-23	15200	新进库存/原装	询价

更多CMBT9014T/-W供应商更新时间2024-6-7 10:20:00

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