CD40107BPSR.A芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
CD40107BPSR	文件：1.1513 Mbytes Page：21 Pages	丝印：CM0107B；Package：SO；CMOS Dual 2-Input NAND Buffer/Driver Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin 文件：1.1513 Mbytes 页数：21 Pages	TI 德州仪器	TI
CD40107BPSR.A	文件：1.1513 Mbytes Page：21 Pages	丝印：CM0107B；Package：SO；CMOS Dual 2-Input NAND Buffer/Driver Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin 文件：1.1513 Mbytes 页数：21 Pages	TI 德州仪器	TI
CD40107BPW	文件：1.1513 Mbytes Page：21 Pages	丝印：CM0107B；Package：TSSOP；CMOS Dual 2-Input NAND Buffer/Driver Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin 文件：1.1513 Mbytes 页数：21 Pages	TI 德州仪器	TI

更多CM0107B供应商更新时间2025-10-10 15:14:00