丝印：CM046B；Package：TSSOP；CMOS Micropower Phase-Locked Loop

Features: Very low power consumption: 70 4W (typ.) at VCO f, = 10 kHz, Vpp = 5 V = Operating frequency range up to 1.4 MHz (typ.) atVpp=10V, RI =5kQ Low frequency drift: 0.04%/°C (typ.) at Vpp = 10 V Choice of two phase comparators: Exclusive-OR network (1) Edge-controlled memory ne

文件：962.73 Kbytes 页数：21 Pages

TI2

德州仪器

丝印：CM046B；Package：TSSOP；CMOS Micropower Phase-Locked Loop

Features: Very low power consumption: 70 4W (typ.) at VCO f, = 10 kHz, Vpp = 5 V = Operating frequency range up to 1.4 MHz (typ.) atVpp=10V, RI =5kQ Low frequency drift: 0.04%/°C (typ.) at Vpp = 10 V Choice of two phase comparators: Exclusive-OR network (1) Edge-controlled memory ne

文件：962.73 Kbytes 页数：21 Pages

TI2

德州仪器

丝印：CM046B；Package：TSSOP；CMOS Micropower Phase-Locked Loop

Features: Very low power consumption: 70 4W (typ.) at VCO f, = 10 kHz, Vpp = 5 V = Operating frequency range up to 1.4 MHz (typ.) atVpp=10V, RI =5kQ Low frequency drift: 0.04%/°C (typ.) at Vpp = 10 V Choice of two phase comparators: Exclusive-OR network (1) Edge-controlled memory ne

文件：962.73 Kbytes 页数：21 Pages

TI2

德州仪器

丝印：CM046B；Package：TSSOP；CMOS Micropower Phase-Locked Loop

Features: Very low power consumption: 70 4W (typ.) at VCO f, = 10 kHz, Vpp = 5 V = Operating frequency range up to 1.4 MHz (typ.) atVpp=10V, RI =5kQ Low frequency drift: 0.04%/°C (typ.) at Vpp = 10 V Choice of two phase comparators: Exclusive-OR network (1) Edge-controlled memory ne

文件：962.73 Kbytes 页数：21 Pages

TI2

德州仪器

丝印：CM046B；Package：TSSOP；CMOS Micropower Phase-Locked Loop

Features: Very low power consumption: 70 4W (typ.) at VCO f, = 10 kHz, Vpp = 5 V = Operating frequency range up to 1.4 MHz (typ.) atVpp=10V, RI =5kQ Low frequency drift: 0.04%/°C (typ.) at Vpp = 10 V Choice of two phase comparators: Exclusive-OR network (1) Edge-controlled memory ne

文件：962.73 Kbytes 页数：21 Pages

TI2

德州仪器