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首页 >CFA634-TMI-KC>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IRF634NLPBF	文件：222.71 Kbytes Page：11 Pages	HEXFETPowerMOSFET Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF634NPBF	文件：162.91 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技	Vishay
IRF634NPBF	文件：222.71 Kbytes Page：11 Pages	HEXFETPowerMOSFET Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF634NS	文件：162.91 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技	Vishay
IRF634NS	文件：301.06 Kbytes Page：11 Pages	PowerMOSFET(Vdss=250V,Rds(on)=0.435ohm,Id=8.0A) Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF634NSPBF	文件：222.71 Kbytes Page：11 Pages	HEXFETPowerMOSFET Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF634NSPBF	文件：162.91 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技	Vishay
IRF634NSTRL	文件：162.91 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技	Vishay
IRF634NSTRLPBF	文件：162.91 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技	Vishay
IRF634NSTRR	文件：162.91 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技	Vishay
IRF634NSTRRPBF	文件：162.91 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技	Vishay
IRF634PBF	文件：3.55392 Mbytes Page：7 Pages	HEXFET짰PowerMOSFET	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF634PBF	文件：1.54151 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati	VishayVishay Siliconix 威世科技	Vishay
IRF634PBF	文件：157.84 Kbytes Page：8 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技	Vishay
IRF634S	文件：174.93 Kbytes Page：6 Pages	PowerMOSFET(Vdss=250V,Rds(on)=0.45ohm,Id=8.1A) DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itp	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星辰微电科技有限公司	CFA75S12	CHEWINS	23+	N/A	12000	CHEWINS工业、军用电源全系列在售	询价
深圳市力拓辉电子有限公司	CFAC149-6009A001D2SD-06	格康电子	21+		102	全新原装鄙视假货15118075546	询价
深圳市科雨电子有限公司	CF-AD1	JAE	20+	连接器	93	就找我吧!--邀您体验愉快问购元件!	询价
北京天阳诚业科贸有限公司	CF-AD1	JAE	23+	NA	25	光纤连接器	询价

更多CFA634-TMI-KC供应商更新时间2024-6-4 18:48:00

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