N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 12A, RDS(ON) = 95mΩ @VGS = 10V. RDS(ON) = 130mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：208.67 Kbytes 页数：4 Pages

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N-Channel Enhancement Mode Field Effect Transistor

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