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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
CEU83A3	文件：141.76 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■30V,80A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=9mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEU83A3	文件：895.6 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V,80A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU83A3	文件：1.01372 Mbytes Page：4 Pages	N-Channel MOSFET uses advanced trench technology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司	DOINGTER
CEU83A3G	文件：421.09 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■30V,93A,RDS(ON)=4.8mΩ@VGS=10V. RDS(ON)=7.4mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB83A3	文件：100.44 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,100A,RDS(ON)=5.3mΩ@VGS=10V. RDS(ON)=8.0mΩ@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEB83A3	文件：651.05 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,100A,RDS(ON)=5.3mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=8.0mW@VGS=4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB83A3G	文件：735.63 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,102A,RDS(ON)=4.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=6.2mW@VGS=4.5V. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED83A3	文件：895.6 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,80A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED83A3	文件：141.76 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,80A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=9mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CED83A3G	文件：421.09 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,93A,RDS(ON)=4.8mΩ@VGS=10V. RDS(ON)=7.4mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP83A3	文件：100.44 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,100A,RDS(ON)=5.3mΩ@VGS=10V. RDS(ON)=8.0mΩ@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CEP83A3	文件：651.05 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,100A,RDS(ON)=5.3mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=8.0mW@VGS=4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP83A3G	文件：735.63 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,102A,RDS(ON)=4.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=6.2mW@VGS=4.5V. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP83A3G	文件：401.69 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,102A,RDS(ON)=4.5mΩ@VGS=10V. RDS(ON)=7.0mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■	CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET
CHM83A3PAPT	文件：345.44 Kbytes Page：3 Pages	N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE30VoltsCURRENT80Ampere FEATURE Smallpackage.(TO-252A) SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. APPLICATION Servomotorcontrol. PowerMOSFETgatedrivers. Otherswitchingapplications.	CHENMKOCHENMKO CHENMKO	CHENMKO

详细参数

型号：
CEU83A3
制造商：
CET
制造商全称：
Chino-Excel Technology
功能描述：
N-Channel Enhancement Mode Field Effect Transistor

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市益百分电子有限公司	CEU83A3	华晶替代	TO220	80000000	2012		询价
深圳市凯斯宇科技有限公司	CEU83A3	CET	2022	TO252	2058	原厂原装正品,价格超越代理	询价
深圳市毅创腾电子科技有限公司	CEU83A3	CET	23+	TO252	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
深圳市特顺芯科技有限公司	CEU83A3	CET	04+	TO252	219		询价
深圳市勤思达科技有限公司	CEU83A3	CET	23+	TO252	8000	全新原装现货,欢迎来电咨询	询价
齐创科技(上海,北京,青岛)有限公司	CEU83A3	SR	23+	TO-252	5000	原装正品,假一罚十	询价
深圳市宇集芯电子有限公司	CEU83A3	CET	23+	TO-252	90000	进口原装现货假一罚十价格合理	询价
深圳市卓越微芯电子有限公司	CEU83A3	CET	2020+	TO-252	9500	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市百视威讯电子科技有限公司	CEU83A3		23+	N/A	59210	正品授权货源可靠	询价
深圳兆威电子有限公司	CEU83A3	VB	2019	TO-252	55000	绝对原装正品假一罚十!	询价

更多CEU83A3供应商更新时间2024-5-1 9:30:00

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