CEU540L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,25A,RDS(ON)=50mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. RDS(ON)=53mW@VGS=5V.

CEU540L

N Channel MOSFET;

CEU540L

N-Channel Enhancement Mode Field Effect Transistor

CEU540N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,25A,RDS(ON)=53mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEU540N

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,25A,RDS(ON)=53mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CHM540ANPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE100VoltsCURRENT36Ampere FEATURE *Smallpackage.(D2PAK) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHM540APAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE100VoltsCURRENT25Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CSMC540

5.0Amp.SurfaceMountSchottkyBarrierDiodes

DD540N

RectifierDiodeModule

RectifierDiodeModule

DD540N

Pressurecontacttechnologyforhighreliability

KeyParameters   VDRM/VRRM2000V-2600V   IFAVM540A(TC=100°C)   IFSM16500A   VT00,78V   rT0,31mΩ   RthJC0,078K/W   Baseplate60mm   Weight1500g Features •Pressurecontacttechnologyforhighreliability •AdvancedMediumPowerTechnology(AMPT) •Industria