CEU4

Multilayer Ceramic Chip Capacitors

CEU4060A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,15A,RDS(ON)=85mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEU4060A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,15A,RDS(ON)=85mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CEU4060AL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,15A,RDS(ON)=80mΩ@VGS=10V. RDS(ON)=95mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEU4060AL

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,16A,RDS(ON)=75mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=90mW@VGS=5V. Leadfreeproductisacquired.

CEU40N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,37A,RDS(ON)=32mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEU40N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,37A,RDS(ON)=32mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CEU40N20

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 200V,40A,RDS(ON)=32mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant

CEU4112A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V,47A,RDS(ON)=10.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=13mW@VGS=4.5V.

CEU4175

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V,-31A,RDS(ON)=18.5mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=25mW@VGS=-4.5V. RoHScompliant.

CEU41A2

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,36A,RDS(ON)=20mΩ@VGS=4.5V. RDS(ON)=30mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEU4201

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-40V,-28A,RDS(ON)=26mΩ@VGS=-10V. RDS(ON)=36mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEU4204

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■40V,24A,RDS(ON)=30mW@VGS=10V.RDS(ON)=45mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEU4204

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V,24A,RDS(ON)=28mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=42mW@VGS=4.5V. Leadfreeproductisacquired.

CEU4269

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■40V,14A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=46mΩ@VGS=4.5V. ■-40V,-12A,RDS(ON)=45mΩ@VGS=10V. RDS(ON)=65mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapab

CEU4269

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 40V,14A,RDS(ON)=32mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RDS(ON)=46mW@VGS=4.5V. -40V,-12A,RDS(ON)=45mW@VGS=10V. RDS(ON)=65mW@VGS=4.5V. TO-252-4Lpackage. Leadfreeproductisacquir

CEU4279

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■40V,14A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=46mΩ@VGS=4.5V. ■-40V,-9A,RDS(ON)=72mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabil

CEU4279

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 40V,14A,RDS(ON)=32mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-252-4Lpackage. RDS(ON)=46mW@VGS=4.5V. Leadfreeproductisacquired. -40V,-9A,RDS(ON)=72mW@VGS=10V. RDS(ON)=110mW@VGS=4.

CEU4301

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-40V,-20A,RDS(ON)=42mΩ@VGS=-10V. RDS(ON)=65mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEU4301

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V,-20A,RDS(ON)=42mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=65mW@VGS=-4.5V. Leadfreeproductisacquired.