N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 120V, 10A, RDS(ON) = 120mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：695.69 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

PNP SILICON PLANAR POWER TRANSISTOR

PNP SILICON PLANAR POWER TRANSISTOR TO-220FP Fully Isolated Plastic Package Complementary CFC2562 High Current Switching Applications

文件：139.2 Kbytes 页数：3 Pages

CDIL

PIANO SWITCHES (FULL PITCH)

文件：451.75 Kbytes 页数：5 Pages

COPAL

尼得科

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 120 Volts CURRENT 10 Ampere FEATURE * Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：199.13 Kbytes 页数：2 Pages

CHENMKO

力勤