N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 120V, 10A, RDS(ON) = 120mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

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CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

FOR OPTICAL INFORMATION SYSTEMS

DESCRIPTION ML1XX2 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 30mW. ML1XX2 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

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MITSUBISHI

三菱电机

VTB Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.

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PERKINELMER

VTP Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window TO-46 package. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response.

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PERKINELMER