VTP Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window TO-46 package. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response.

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PERKINELMER

快速响应硅光电二极管

VTP1012H快速响应硅光电二极管可提供1. 6 mm2的感光面积以及400 nm至1150 nm的光谱响应。\n\n我们的快速响应硅光电二极管专为低结电容而设计，旨在提供快速的响应时间，并且可以在反向偏压的情况下工作以减小电容，从而进一步加快响应速度。\n\n这些光电二极管也可以在响应速度无关紧要的应用中以光伏模式工作。这些装置在IR光谱范围内具有出色的响应特性，并且能够与埃赛力达红外LED VTE系列完美匹配。\n\n功能与优点：\n\n在近红外光谱范围内可见\n\n线性范围1-2%，可适使用70到 90年\n\n低暗电流\n\n高分流电阻\n\n低结电容\n\n快速响应\n\n • 感光面积 = 1.6 mm2• 短路电流=在100fc，2850K时，最小值为10 µA，• 暗电流=在50V反向偏压时，最大值为7nA• 结电容 = 最大值6 pF（反向偏压为15 V时）• 击穿电压 = 最低50V• 光谱范围 = 400 nm至1150 nm• 峰值光谱响应=925 nm• 峰值波长的灵敏度=通常为0,55A/W• 角响应=50%响应时成±35度，;

Excelitas

埃赛力达

Trimmer Potentiometer

[SHARMA] Features ● 3/4” Rectangular / Multiturn ● Cermet / Industrial / Sealed ● Available with a knob for finger adjust ● Available with extended shaft

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ETCList of Unclassifed Manufacturers

未分类制造商

37.0-40.0 GHz GaAs MMIC Power Amplifier

General Description Mimix Broadband’s two stage 37.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +37.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to en

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MIMIX

Reduced height micro-power current monitor

Description The ZXCT1012 is a high side current sense monitor. Using this type of device eliminates the need to disrupt the ground plane when sensing a load current. The ZXCT1012 takes the voltage developed across a small value resistor and translates it into a proportional output current. A use

文件：448.63 Kbytes 页数：10 Pages

ZETEX