N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 36A , RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：893.88 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 36A , RDS(ON) = 15mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 22mW @VGS = 4.5V. Lead free product is acquired.

文件：628.66 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：415.04 Kbytes 页数：4 Pages

CET

华瑞

N Channel MOSFET

CET

华瑞