丝印：CET；Package：SC70(DCK)；INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1 Features • Updated format to match new TI layout and flow. Tables, figures and cross-references use a new numbering sequence throughout the document. Wide Common-Mode Range: –0.3 V to 26 V • Offset Voltage: ±35 μV (Maximum, INA210) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: –

文件：1.60425 Mbytes 页数：50 Pages

TI

德州仪器

丝印：CET；Package：DO-214AC；400W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 400W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde

文件：3.2336 Mbytes 页数：7 Pages

UNSEMI

优恩半导体

丝印：CET；Package：DO-214AA；600W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 600W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde

文件：3.25781 Mbytes 页数：7 Pages

UNSEMI

优恩半导体

丝印：CET；Package：SOT-89；NPN Transistors

文件：1.16139 Mbytes 页数：3 Pages

KEXIN

科信电子

丝印：CET；Package：SOD-123FL；TRANSIENT VOLTAGE SUPPRESSOR

文件：1.01244 Mbytes 页数：4 Pages

CHENDA

辰达半导体

丝印：CET；Package：SOD-123FL；Surface Mount Transient Voltage Suppressor Power 200W

文件：1.25369 Mbytes 页数：4 Pages

JUXING

广东钜兴电子

丝印：CET；Package：SOD-123FL；Surface mount transient voltage suppressor power 200 watts

文件：495.59 Kbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：CET；Package：SOD123FL；Surface mount transient voltage suppressor power 200 watts

文件：438.38 Kbytes 页数：4 Pages

YFWDIODE

佑风微

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 150V, 2A, RDS(ON) = 440mΩ @VGS = 10V. RDS(ON) = 580mΩ @VGS = 6V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead-free plating ; RoHS compliant. ■ SOT-223 package.

文件：623.64 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 3A, RDS(ON) = 200mΩ @VGS = 10V. RDS(ON) = 280mΩ @VGS = 6V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-223 package.

文件：397.36 Kbytes 页数：4 Pages

CET

华瑞