N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 8A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. ■ High dense cell design for low RDS(ON). ■ Rugged and reliable. ■ SOT-223 Package.

文件：495.44 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 4.5A, RDS(ON) = 90mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-223 package.

文件：409.86 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -4.3A, RDS(ON) = 86mW @VGS = -10V. RDS(ON) = 125mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-223 package. Lead free product is acquired.

文件：601.18 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -4.3A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-223 package.

文件：391.17 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -4.4A, RDS(ON) = 86mW @VGS = -10V. RDS(ON) = 125mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-223 package. RoHS compliant.

文件：504.34 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -3.5A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 170mΩ @VGS = -4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-223 package.

文件：392.58 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -4.1A, RDS(ON) = 110mW @VGS = -10V. RDS(ON) = 150mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-223 package. RoHS compliant.

文件：502.37 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -5.3A, RDS(ON) = 60mW @VGS = -10V. RDS(ON) = 120mW @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-223 package. Lead-free plating ; RoHS compliant.

文件：501.99 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode MOSFET

文件：503.35 Kbytes 页数：5 Pages

CET

华瑞

MHz Chip Type -Tight Frequency Tolerance for Automotive-

文件：946.43 Kbytes 页数：17 Pages

MURATA

村田