CET6426

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,4.5A,RDS(ON)=90mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CEU6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,16A,RDS(ON)=66mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS( Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=85mW@VGS=4.5V. Leadfreeproductisacquired.

CEU6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,16A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEU6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,34A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CHM6426JPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT4.7Ampere FEATURE *Smallflatpackage.(SO-8) *SuperHighdensitycelldesignforextremelylowRDS(ON). *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHM6426PAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT16Ampere FEATURE *HighdensitycelldesignforextremelylowRDS(ON). *Smallpackage.(TO-252A) APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHM6426XPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT3Ampere FEATURE *Smallpackage.(SC-62/SOT-89) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

DNB6426

RectifierDiode

FEATURES ■DoubleSideCooling ■HighSurgeCapability APPLICATIONS ■Rectification ■FreewheelDiode ■DCMotorControl ■PowerSupplies ■Welding ■BatteryChargers

G6426-A

MagAmpToroids??G642XSeries

G6426-A

MagAmpToroids