N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 4.5A, RDS(ON) = 90mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-223 package.

文件：409.86 Kbytes 页数：4 Pages

CET

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 34A, RDS(ON) = 25mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：425.79 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 16A , RDS(ON) = 66mΩ @VGS = 10V. RDS(ON) = 85mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：351.46 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 16A , RDS(ON) = 66mW @VGS = 10V. Super high dense cell design for extremely low RDS( High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 85mW @VGS = 4.5V. Lead free product is acquired.

文件：451.96 Kbytes 页数：4 Pages

CET-MOS

华瑞