CES2302A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,4.4A,RDS(ON)=40mW@VGS=4.5V. RDS(ON)=70mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=110mW@VGS=1.8V.

CES2303

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-1.9A,RDS(ON)=150mΩ(typ)@VGS=-10V. RDS(ON)=230mΩ(typ)@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CES2305

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-4A,RDS(ON)=55mΩ@VGS=-10V. RDS(ON)=70mΩ@VGS=-4.5V. RDS(ON)=120mΩ@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CES2305

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-4A,RDS(ON)=55mW@VGS=-10V. RDS(ON)=70mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant.

CES2305A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-4A,RDS(ON)=52mW@VGS=-10V. RDS(ON)=60mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=85mW@VGS=-2.5V.

CES2306

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,3.6A,RDS(ON)=60mΩ@VGS=4.5V. RDS(ON)=70mΩ@VGS=2.5V. RDS(ON)=100mΩ@VGS=1.8V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CES2306A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,4.1A,RDS(ON)=45mW@VGS=4.5V. RDS(ON)=55mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=110mW@VGS=1.8V.

CES2307

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-3.2A,RDS(ON)=78mΩ@VGS=-10V. RDS(ON)=120mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■SOT-23package. ■Leadfreeproductisacquired.

CES2307

P-Channel 30 V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

CES2307A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-3.2A,RDS(ON)=78mΩ@VGS=-10V. RDS(ON)=120mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■SOT-23package. ■Lead-freeplating;RoHScompliant.