FCX658A

NPNSiliconPlanarMediumPowerHighVoltageTransistor

Features ●400VoltVCEO ●0.5Ampcontinuouscurrent ●Ptot=1Watt ●Optimisedhfecharacterisedupto200mA

FCX658A

SOT89NPNSILICONPLANARMEDIUMPOWERHIGHVOLTAGETRANSISTOR

Features •BVCEO=400V •LowSaturationVoltageVCE(sat)

FCX658A

NPNSILICONPLANARMEDIUMPOWERHIGHVOLTAGETRANSISTOR

FEATURES *400VoltVCEO *0.5Ampcontinuouscurrent *Ptot=1Watt *Optimisedhfecharacterisedupto200mA APPLICATIONS *Telephonediallercircuits *Hookswitchesformodems *PredriverswithinHIDlampballasts *(SLIC)SubscriberLineInterfaceCards

FDC658AP

SingleP-ChannelLogicLevelPowerTrench짰MOSFET-30V,-4A,50mOhm

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildsadvancedPowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features ■MaxrDS(on)=50m@VGS=-10V,ID=-4A ■MaxrDS(on)=75m@VGS=-4.5V,ID=-3.4A ■LowGateCh

FDC658AP

P-ChannelMOSFET

FDC658AP

P-Channel30-V(D-S)MOSFET

FDC658P

SingleP-Channel,LogicLevel,PowerTrenchTMMOSFET

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Thesedevicesarewellsuitedf

FDLL658

GeneralPurposeDiodes

FZT658

SOT223NPNSILICONPLANARHIGHVOLTAGETRANSISTOR

Features •BVCEO>400V •IC=500mAHighContinuousCurrent •ICM=1APeakPulseCurrent •LowSaturationVoltageVCE(SAT)40Specifiedupto200mAforHighCurrentGainHold-Up •ComplementaryPNPType:FZT758 •Lead-FreeFinish;RoHSCompliant(Notes1&2) •

FZT658

NPNSiliconPlanarHighVoltageTransistor

Features ●400VoltVCEO ●Lowsaturationvoltage