丝印：C28；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, r epetition r ate (duty cycle): 0.01

文件：1.58341 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：C28；Package：DO-214AA；5.0 To 200V 1000W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 1000W peak pulse power capability with a 10/1000μs waveform Repetitive rate (duty cycle) : 0.01 Typical IR less than 1μA above 10V Excellent clamping capability Very fast response time High temperature soldering: 260℃/10s at terminals. RoHS compliant

文件：3.35517 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：C28；Package：SOT-323；30V N-Channel Enhancement Mode MOSFET

Features  Advanced Trench Process Technology  ESD Protected  Specially Designed for Relay driver, Speed line drive, etc  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 standard Mechanical Data  Case : SOT-323 Package  Terminals : Solderable per MIL-

文件：306.28 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：C28；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

文件：178.28 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：C2800D；Package：SOIC；LOW-POWER BICMOS CURRENT-MODE PWM

Controlled Baseline − One Assembly − One Test Site − One Fabrication Site Extended Temperature Performance of −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree† ESD Protection Exceeds 200 V Using Machine M

文件：533.97 Kbytes 页数：19 Pages

TI

德州仪器

丝印：C2800D；Package：SOIC；LOW-POWER BICMOS CURRENT-MODE PWM

Controlled Baseline − One Assembly − One Test Site − One Fabrication Site Extended Temperature Performance of −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree† ESD Protection Exceeds 200 V Using Machine M

文件：533.97 Kbytes 页数：19 Pages

TI

德州仪器

丝印：C2800D；Package：SOIC；LOW-POWER BICMOS CURRENT-MODE PWM

Controlled Baseline − One Assembly − One Test Site − One Fabrication Site Extended Temperature Performance of −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree† ESD Protection Exceeds 200 V Using Machine M

文件：533.97 Kbytes 页数：19 Pages

TI

德州仪器

丝印：C2800D；Package：SOIC；LOW-POWER BICMOS CURRENT-MODE PWM

Controlled Baseline − One Assembly − One Test Site − One Fabrication Site Extended Temperature Performance of −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree† ESD Protection Exceeds 200 V Using Machine M

文件：533.97 Kbytes 页数：19 Pages

TI

德州仪器

丝印：C28C；Package：TSSOP-8；EEPROM Serial 128-Kb I2C

文件：269.65 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

丝印：C28341ZHHTTMS320；Package：BGAMICROSTAR；TMS320C2834x Delfino Microcontrollers

文件：4.265 Mbytes 页数：170 Pages

TI

德州仪器