丝印：C2A；LR2CANLT1G S-LR2CANLT1G

FEATURES ● Ultra low leakage: nA level. ● Low clamping voltage. ● Complies with IEC 61000-4-2 standards:Air discharge: ±30kV Contact discharge: ±30kV ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- Prefix for Automotive and Other Applicat

文件：294.53 Kbytes 页数：4 Pages

LRC

乐山无线电

丝印：C2A；LR2CANLT1G S-LR2CANLT1G

1. FEATURES ● Ultra low leakage: nA level. ● Low clamping voltage. ● Complies with IEC 61000-4-2 standards:Air discharge: ±30kV Contact discharge: ±30kV ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- Prefix for Automotive and Other Appli

文件：294.55 Kbytes 页数：4 Pages

LRC

乐山无线电

丝印：C2A；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Supply voltage : VCC = 2.7 to 3.3 V • Medium output power : μPC2762TB; PO(1 dB) = +8.0 dBm TYP. @ f = 0.9 GHz μPC2763TB; PO(1 dB) = +9.5 dBm TYP. @ f = 0.9 GHz μPC2771TB; PO(1 dB) = +11.5 dBm TYP. @ f = 0.9 GHz • Power gain : μPC2762TB; GP = 13 dB TYP. @ f = 0.9 GHz μPC2763TB; GP

文件：395.2 Kbytes 页数：30 Pages

RENESAS

瑞萨

丝印：C2A；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Supply voltage : VCC = 2.7 to 3.3 V • Circuit current : ICC = 30 mA TYP. @ VCC = 3.0 V • Medium output power : PO(1dB) = +9.5 dBm TYP. @ f = 0.9 GHz PO(1dB) = +9.0 dBm TYP. @ f = 1.9 GHz PO(1dB) = +8.0 dBm TYP. @ f = 2.4 GHz • Power gain : GP = 21.5 dB TYP. @ f = 0.9 GHz GP = 20.

文件：327.58 Kbytes 页数：19 Pages

RENESAS

瑞萨

丝印：C2A；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Supply voltage : VCC = 2.7 to 3.3 V • Circuit current : ICC = 23.0 mA TYP. @ VCC = 3.0 V • Medium output power : PO(1dB) = +8.0 dBm TYP. @ f = 0.9 GHz PO(1dB) = +7.0 dBm TYP. @ f = 1.9 GHz PO(1dB) = +7.0 dBm TYP. @ f = 2.4 GHz • Power gain : GP = 19.0 dB TYP. @ f = 0.9 GHz GP = 2

文件：332.18 Kbytes 页数：18 Pages

RENESAS

瑞萨

丝印：C2A；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Supply voltage : VCC = 2.7 to 3.3 V • Circuit current : ICC = 23.0 mA TYP. @ VCC = 3.0 V • Medium output power : PO(1dB) = +8.0 dBm TYP. @ f = 0.9 GHz PO(1dB) = +7.0 dBm TYP. @ f = 1.9 GHz PO(1dB) = +7.0 dBm TYP. @ f = 2.4 GHz • Power gain : GP = 19.0 dB TYP. @ f = 0.9 GHz GP = 2

文件：332.18 Kbytes 页数：18 Pages

RENESAS

瑞萨

丝印：C2A；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Supply voltage : VCC = 2.7 to 3.3 V • Circuit current : ICC = 30 mA TYP. @ VCC = 3.0 V • Medium output power : PO(1dB) = +9.5 dBm TYP. @ f = 0.9 GHz PO(1dB) = +9.0 dBm TYP. @ f = 1.9 GHz PO(1dB) = +8.0 dBm TYP. @ f = 2.4 GHz • Power gain : GP = 21.5 dB TYP. @ f = 0.9 GHz GP = 20.

文件：327.58 Kbytes 页数：19 Pages

RENESAS

瑞萨

丝印：C2A；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Supply voltage : VCC = 2.7 to 3.3 V • Medium output power : μPC2762TB; PO(1 dB) = +8.0 dBm TYP. @ f = 0.9 GHz μPC2763TB; PO(1 dB) = +9.5 dBm TYP. @ f = 0.9 GHz μPC2771TB; PO(1 dB) = +11.5 dBm TYP. @ f = 0.9 GHz • Power gain : μPC2762TB; GP = 13 dB TYP. @ f = 0.9 GHz μPC2763TB; GP

文件：395.2 Kbytes 页数：30 Pages

RENESAS

瑞萨

丝印：C2A；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Supply voltage : VCC = 2.7 to 3.3 V • Medium output power : μPC2762TB; PO(1 dB) = +8.0 dBm TYP. @ f = 0.9 GHz μPC2763TB; PO(1 dB) = +9.5 dBm TYP. @ f = 0.9 GHz μPC2771TB; PO(1 dB) = +11.5 dBm TYP. @ f = 0.9 GHz • Power gain : μPC2762TB; GP = 13 dB TYP. @ f = 0.9 GHz μPC2763TB; GP

文件：395.2 Kbytes 页数：30 Pages

RENESAS

瑞萨

Storage Box

Description Handy, strong injection-moulded polypropylene container, with slot for use on display and featuring excellent transparency.

文件：178.34 Kbytes 页数：1 Pages

MULTICOMP

易络盟