丝印：C2800D；Package：SOIC；LOW-POWER BICMOS CURRENT-MODE PWM

Controlled Baseline − One Assembly − One Test Site − One Fabrication Site Extended Temperature Performance of −55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product Change Notification Qualification Pedigree† ESD Protection Exceeds 200 V Using Machine M

文件：533.97 Kbytes 页数：19 Pages

TI

德州仪器

SELECTION GUIDE TO HIGH-VOLTAGE/HIGH-CURRENT

文件：2.7518 Mbytes 页数：128 Pages

ETCList of Unclassifed Manufacturers

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SELECTION GUIDE TO HIGH-VOLTAGE/HIGH-CURRENT

文件：2.7518 Mbytes 页数：128 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2800 is N-channel MOSFET designed for DC/DC converter and power management applications of portable equipments. FEATURES • Low on-state resistance RDS(on)1 = 7.3 mΩ MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 8.5 A) • Built-in gate protection di

文件：359.15 Kbytes 页数：8 Pages

RENESAS

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