ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

FEATURES • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for impr

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SEME-LAB

Bipolar NPN Device in a Hermetically sealed

Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount Package for High Reliability Applications Bipolar NPN Device. VCEO = 160V IC = 10A

文件：14.67 Kbytes 页数：1 Pages

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Bipolar Junction Transistors

TT Electronics

CDIP

DDC

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TO-3

MOT

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