High voltage fast-switching

Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level du

文件：249.19 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

Package：TO-220-3 整包；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 4A TO220FP

STMICROELECTRONICS

意法半导体

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of Parts and Manufacturing Process.

文件：69.8 Kbytes 页数：6 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Integrated Circuit TV Sound Channel, 2W

Description: The NTE742 is designed for use as the entire sound function in television receivers or FM table radios. The NTE742 sound channel will directly drive a 16 ohm speaker with more than 2 watts output. This monolithic integrated circuit will operate from a single 18V to 28V power supply a

文件：25.18 Kbytes 页数：3 Pages

NTE

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

文件：37.12 Kbytes 页数：2 Pages

POLYFET