高压快速切换NPN功率晶体管

The device is manufactured using the diffused collector in planar technology adopting new and enhanced high voltage structure. It has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usu • Low spread of dynamic parameters \n• Minimum lot-to-lot spread for reliable operation \n• High voltage capability \n• Very high switching speed;

ST

意法半导体

High voltage fast-switching NPN power transistor

Description The device is manufactured using the diffused collector in planar technology adopting new and enhanced high voltage structure. It has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil

文件：221.57 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

Package：TO-220-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 500V 12A TO220

STMICROELECTRONICS

意法半导体

-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)

Feature 1. VCE (sat) is lower than the conventional products. 2. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3. The bias resistors consist of thin-film resistors with complete isolation to al

文件：64.72 Kbytes 页数：2 Pages

ROHM

罗姆

-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)

文件：184.41 Kbytes 页数：3 Pages

ROHM

罗姆

-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)

Feature 1. VCE (sat) is lower than the conventional products. 2. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3. The bias resistors consist of thin-film resistors with complete isolation to al

文件：64.72 Kbytes 页数：2 Pages

ROHM

罗姆