High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level d

文件：316 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability.\n Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during break High voltage capability\nMinimum lot-to-lot spread for reliable operation\nLow spread of dynamic parameters\nVery high switching speed;

ST

意法半导体

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level d

文件：316 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level d

文件：316 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

The BULD741T4 is manufactured using high voltage multi-epitaxial planar technology to enhance switching speeds and high voltage capability.\n\n Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during br • High voltage capability \n• Low spread of dynamic parameters \n• Minimum lot-to-lot spread for reliable operation \n• Very high switching speed;

ST

意法半导体

Package：TO-251-3 短引线，IPak，TO-251AA；包装：管件 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 2.5A IPAK

STMICROELECTRONICS

意法半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 2.5A DPAK

STMICROELECTRONICS

意法半导体