BUL642D2规格书应用电路原装现货ONSEMI-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
BUL642D2	文件：101.28 Kbytes Page：8 Pages	High Speed, High Gain Bipolar NPN Transistor with Integrated Collector?묮mitter and Built?뭝n Efficient Antisaturation Network The BUL642D2 is a state−of−the−art High Speed High Gain Bipolar Transistor (H2BIP). Tight dynamic characteristics and lot to lot minimum spread (150 ns on storage time) make it ideally suitable for Light Ballast Application. A new development process brings avalanche energy capability, making the 文件：101.28 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
BUL642D2	文件：300 bytes Page：1 Pages	Power 3A 825V NPN	ONSEMI 安森美半导体	ONSEMI
BUL642D2G	文件：101.28 Kbytes Page：8 Pages	High Speed, High Gain Bipolar NPN Transistor with Integrated Collector?묮mitter and Built?뭝n Efficient Antisaturation Network The BUL642D2 is a state−of−the−art High Speed High Gain Bipolar Transistor (H2BIP). Tight dynamic characteristics and lot to lot minimum spread (150 ns on storage time) make it ideally suitable for Light Ballast Application. A new development process brings avalanche energy capability, making the 文件：101.28 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
BUL642D2G	文件：100 bytes Page：1 Pages	Package：TO-220-3；包装：散装类别：分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个描述：TRANS NPN 440V 3A TO220	ONSEMI 安森美半导体	ONSEMI

型号：
BUL642D2
制造商：
ONSEMI
制造商全称：
ON Semiconductor
功能描述：
High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network

更多BUL642D2供应商更新时间2026-10-24 10:50:00