HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

文件：210.59 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

文件：210.59 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

ST

意法半导体

Silicon epitaxial planar type

文件：49.24 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon Complementary Transistors Audio Output, Video, Driver

Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide c

文件：27.8 Kbytes 页数：3 Pages

NTE

Silicon Complementary Transistors General Purpose Amp

Description: The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use in general purpose power amplifier and switching applications. Features: • High VCE Ratings • Exceptional Power Dissipation Capability

文件：20.83 Kbytes 页数：2 Pages

NTE