HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUL654 is manufactured using high voltage Multi Epitaxial Planar technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ■

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STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR

• HIGH VOLTAGE CAPABILITY\n• LOW BASE-DRIVE REQUIREMENTS\n• MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION• FULLY CHARACTERIZED AT 125°C\n• VERY HIGH SWITCHING SPEED;

ST

意法半导体

Package：TO-220-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 12A TO220

STMICROELECTRONICS

意法半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

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FAIRCHILD

仙童半导体

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics Output Power = 15 W Minimum Gain = 7.8 dB Efficiency = 55

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MOTOROLA

摩托罗拉

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt

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ZETEX