isc Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Breakdown Voltage : V(BR)CEO = 400V(Min.) • Collector Saturation Voltage : VCE(sat) = 0.2V(Max) @ IC= 0.8A APPLICATIONS • Designed for electronic lamp ballast circuits switch-mode power supplies applications.

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ISC

无锡固电

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

• Typical application (220V mains unless otherwise specified) • Integrated antisaturation and protection network • According to tube impedance 120V AC mains 277V AC mains 340V AC mains As PFC 220V AC mains Suffix D = Integrated free-wheeling diode ST preferred products in bol

文件：281.44 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

文件：286.44 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching

Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level du

文件：249.19 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

文件：286.44 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

高压快速切换NPN功率晶体管

The devices are manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdow • Low spread of dynamic parameters \n• High voltage capability \n• Minimum lot-to-lot spread for reliable operation \n• Very high switching speed;

ST

意法半导体

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 4A TO220

STMICROELECTRONICS

意法半导体

Package：TO-220-3 整包；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 4A TO220FP

STMICROELECTRONICS

意法半导体