BUL45D2中文资料NPN Bipolar Power Transistor数据手册ONSEMI规格书

描述 Description

The BUL45D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.

特性 Features

• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ IC = 100 mA
• Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
• Integrated Collector-Emitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic VCE(sat)
• \"6 Sigma\" Process Providing Tight and Reproductible Parameter Spreads
• Pb-Free Package is Available

简介

BUL45D2属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的BUL45D2晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。