Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 400V(Min) · Collector-Emitter Saturation Voltage -VCE(sat) :0.2V(Max) @IC=0.6A APPLICATIONS · Electronic lamp ballast circuits · Switch-mode power supplies

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ISC

无锡固电

Silicon NPN High Voltage Switching Transistor

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VishayVishay Siliconix

威世科技

Silicon NPN High Voltage Switching Transistor

Vishay

威世科技

500 WATTS (AC) DC/D CSINGLE OUTPUT

Features • Single Output • 3U x 42TE x 166.5mm • Weight: 3.5kg

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POWERBOX

Chip Schottky Barrier Rectifier

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COMCHIP

典琦

LED array

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LUMINIS