General Purpose NPN Epitaxial Planar Transistor

Description The BTD1768A3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features • Low collector saturation voltage • High breakdown voltage, VCEO=80V (min.) • High collector current, IC(max)=1A (DC)

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General Purpose NPN Epitaxial Planar Transistor

Description The BTD1768BA3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features • Low collector saturation voltage • High breakdown voltage, VCEO=80V (min.) • High collector current, IC(max)=1A (DC) • Pb-free package

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NPN Epitaxial Planar Transistor

Features • High VCEO, VCEO=80V • High IC, IC(DC)=1A • Low VCE(sat) • Good current gain linearity • Complementary to BTB1198M3 • Pb-free lead plating

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General Purpose NPN Epitaxial Planar Transistor

Description The BTD1768N3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features • Low collector saturation voltage • High breakdown voltage, VCEO=80V (min.) • High collector current, IC(max)=1A (DC)

文件：179.62 Kbytes 页数：4 Pages

CYSTEKEC

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General Purpose NPN Epitaxial Planar Transistor

Description The BTD1768S3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features • Low collector saturation voltage • High breakdown voltage, VCEO=80V (min.) • High collector current, IC(max)=1A (DC) • Pb-free package

文件：264.99 Kbytes 页数：6 Pages

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General Purpose NPN Epitaxial Planar Transistor

Description The BTD1782N3 is designed for use in driver and output stages of AF amplifier and general purpose application. Features • Low VCE(SAT), VCE(SAT)= 0.15V(typ) @IC=500mA/IB=50mA • High breakdown voltage, VCEO=80V (min.) • Complements to BTB1198N3 • Pb-free package

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Low Vcesat NPN Epitaxial Planar Transistor

Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features • Very low collector-to-emitter saturation voltage • Fast switching speed • High

文件：153.52 Kbytes 页数：4 Pages

CYSTEKEC

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Low Vcesat NPN Epitaxial Planar Transistor

Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features • Very low collector-to-emitter saturation voltage • Fast switching speed • High

文件：174.62 Kbytes 页数：4 Pages

CYSTEKEC

全宇昕科技

Low Vcesat NPN Epitaxial Planar Transistor

Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features • Very low collector-to-emitter saturation voltage • Fast switching speed • High

文件：263.56 Kbytes 页数：7 Pages

CYSTEKEC

全宇昕科技

Low Vcesat NPN Epitaxial Planar Transistor

Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features • Very low collector-to-emitter saturation voltage • Fast switching speed • High

文件：173.15 Kbytes 页数：4 Pages

CYSTEKEC

全宇昕科技