丝印：38D；Package：SOT363；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control

文件：707.2 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：38D；Package：SOT363；50V N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control

文件：707.2 Kbytes 页数：7 Pages

DIODES

美台半导体

Low On-Resistance

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switchin

文件：367.75 Kbytes 页数：6 Pages

DIODES

美台半导体

Low On-Resistance

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switchin

文件：367.75 Kbytes 页数：6 Pages

DIODES

美台半导体

Low On-Resistance

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switchin

文件：367.75 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：MM5；Package：SOT-363；MOSFET

Features - Low on-resistance. - Fast switching speed. - Low input capacitance.

文件：639.05 Kbytes 页数：7 Pages

COMCHIP

典琦

丝印：MM5；Package：SOT-23；MOSFET

Features - Low on-resistance. - Fast switching speed. - Low input capacitance. - ESD protection up to 1.5kV (human body mode).

文件：501.28 Kbytes 页数：6 Pages

COMCHIP

典琦

丝印：MM5；Package：DFN1006-3；MOSFET

Features - Low on-resistance. - Fast switching speed. - Low input capacitance. - ESD protection up to 1.5kV (human body mode).

文件：497.23 Kbytes 页数：6 Pages

COMCHIP

典琦

丝印：MM5；Package：SOT-723；MOSFET

Features - Low on-resistance. - Fast switching speed. - Low input capacitance. - ESD protection up to 1.5kV (human body mode).

文件：499.87 Kbytes 页数：6 Pages

COMCHIP

典琦

丝印：MM5；Package：SOT-523；MOSFET

Features - Low on-resistance. - AEC-Q101 Qualified. - Fast switching speed. - Low input capacitance. - ESD protection up to 1.5kV (human body mode).

文件：497.76 Kbytes 页数：6 Pages

COMCHIP

典琦