SIPMOS Small-Signal-Transistor

Feature • N-Channel • Enhancement mode • Logic level • dv/dtrated • Pb-free lead-plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21

文件：229.92 Kbytes 页数：9 Pages

Infineon

英飞凌

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

• N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V

文件：131.55 Kbytes 页数：8 Pages

SIEMENS

西门子

SIPMOS짰 Small-Signal-Transistor

Feature • N-Channel • Enhancement mode • Logic level • dv/dtrated • Pb-free lead-plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21

文件：444.97 Kbytes 页数：9 Pages

Infineon

英飞凌

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET PARTMARKING DETAIL – SS

文件：58.78 Kbytes 页数：3 Pages

Zetex

丝印：SS；Package：SOT-23；N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These prod

文件：125.66 Kbytes 页数：5 Pages

Fairchild

仙童半导体

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

■ DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. ■ FEATURES

文件：157.64 Kbytes 页数：3 Pages

UTC

友顺

N-Channel Enhancement Mode Field Effect Transistor

Features • 50V, 0.22 A, RDS(ON) = 3.5Ω @ VGS = 10 V RDS(ON) = 6.0Ω @ VGS = 4.5 V • High density cell design for low RDS(ON). • Rugged and Reliable. • SOT-23 package

文件：481.32 Kbytes 页数：5 Pages

CET

华瑞

丝印：SS；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • The BSS138Q is suitable for automotive

文件：92.3 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：SS；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4) • Qualified to AEC-Q101 Standards for High Reliability

文件：139.53 Kbytes 页数：4 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ● Low On-Resistance ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards for Hi

文件：387.49 Kbytes 页数：5 Pages

DIODES

美台半导体