100V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON) , VGS@10V, ID@170mA

文件：320.98 Kbytes 页数：6 Pages

PANJIT

強茂

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V

文件：133.21 Kbytes 页数：8 Pages

SIEMENS

西门子

丝印：B123；Package：SOT-23；N Channel MOSFET

FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable

文件：937.51 Kbytes 页数：5 Pages

SY

顺烨电子

丝印：B123；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 100V ● ID 200mA ● RDS(ON)( at VGS=10V)

文件：594.71 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

丝印：123；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable

文件：1.54835 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：SA；Package：SOT-23；N-CHANNEL POWER MOSFET

FEATURE ● Pb-Free Package is available. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

文件：671.74 Kbytes 页数：6 Pages

HMSEMI

华之美半导体

N-CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N-CHANNEL MOSFET in a SOT-23 Plastic Package. Features High density cell design for extremely low RDS(ON). Applications This device is suitable for use as a load switch or in PWM applications.

文件：711.86 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

N-Channel Enhancement Mode Field Effect Tramsistor

Features • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • High Drain-Source Voltage Rating

文件：699.02 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

N-channel TrenchMOS transistor Logic level FET

FEATURES • ’Trench’ technology • Extremely fast switching • Logic level compatible • Subminiature surface mounting package GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:- • Relay driver • High-spe

文件：143.93 Kbytes 页数：5 Pages

NEXPERIA

安世

N-Channel MOSFET

Features ● VDS (V) = 100V ● ID = 0.17 A (VGS = 10V) ● RDS(ON)

文件：501.82 Kbytes 页数：5 Pages

YFWDIODE

佑风微