N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Spe

文件：419.64 Kbytes 页数：5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Spe

文件：419.64 Kbytes 页数：5 Pages

DIODES

美台半导体

SIPMOS Small-Signal Transistor (N channel Enhancement mode)

• N channel • Enhancement mode •VGS(th)= 1.5 ...2.5 V

文件：78.7 Kbytes 页数：7 Pages

SIEMENS

西门子

SIPMOS Small-Signal Transistor (N channel Enhancement mode)

• N channel • Enhancement mode •VGS(th)= 1.5 ...2.5 V

文件：78.12 Kbytes 页数：7 Pages

SIEMENS

西门子

SIPMOS짰 Small-Signal-Transistor

Features • N-channel • Depletion mode • dv /dt rated • Available with VGS(th) indicator on reel • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21

文件：236.82 Kbytes 页数：9 Pages

INFINEON

英飞凌

丝印：SHs；Package：PG-SOT23；SIPMOS® Small-Signal-Transistor

Features • N-channel • Depletion mode • dv/dt rated • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.06799 Mbytes 页数：10 Pages

INFINEON

英飞凌

0.021A, 600V SMALL-SIGNAL-TRANSISTOR

DESCRIPTION The UTC BSS127 is an enhancement N-channel mode Power FET, it uses UTC’s advanced technology to provide customers ultra high switching speed and ultra low gate charge. FEATURES * RDS(ON)

文件：230.96 Kbytes 页数：4 Pages

UTC

友顺

SIPMOS짰 Small-Signal-Transistor

SIPMOS® Small-Signal-Transistor Feature • n-channel • enhancement mode • Logic level • dv /dt rated • Pb-free lead plating, RoHS compliant

文件：271.43 Kbytes 页数：9 Pages

INFINEON

英飞凌

Low Input Capacitance

Description This new generation uses advanced planar technology MOSFET, provide excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. Features • Low Input Capacitance • High BVDSS Rating for Power Application • Low Input/Output Leakage • To

文件：366.45 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：B127；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description This new generation uses advanced planar technology MOSFET, provide excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. Features Low Input Capacitance High BVDSS Rating for Power Application Low Input/Output Leakage Appl

文件：242.32 Kbytes 页数：6 Pages

RECTRON

丽正国际