丝印：T8-；Package：SOT-23；PNP switching transistors

DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complements: BSR13 and BSR14. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Medium power switching.

文件：139 Kbytes 页数：8 Pages

恩XP

丝印：T8-；Package：SOT-23；PNP switching transistors

DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complements: BSR13 and BSR14. FEATURES • High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Medium power switching.

文件：45.83 Kbytes 页数：8 Pages

PHI

PHI

SILICON PLANAR EPITAXIAL TRANSISTORS

SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors SOT-23 Formed SMD Package

文件：152.16 Kbytes 页数：4 Pages

CDIL

丝印：T8；Package：SOT23；60 V, 600 mA, PNP switching transistor

1. General description PNP switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Single general-purpose switching transistor • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • Swi

文件：228.7 Kbytes 页数：11 Pages

NEXPERIA

安世

NPN switching transistor

DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: BSR18A. FEATURES • Low current (max. 100 mA) • Low voltage (max. 40 V). APPLICATIONS • Switching and linear amplification.

文件：62 Kbytes 页数：8 Pages

PHI

PHI

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.

文件：83.64 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.

文件：83.64 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

丝印：U92；Package：SOT-23；NPN switching transistor

DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: BSR18A. FEATURES • Low current (max. 100 mA) • Low voltage (max. 40 V). APPLICATIONS • Switching and linear amplification.

文件：62 Kbytes 页数：8 Pages

PHI

PHI

SILICON PLANAR EPITAXIAL TRANSISTORS

SILICON PLANAR EPITAXIAL TRANSISTORS SOT-23 Formed SMD Package N–P–N silicon transistor

文件：145.32 Kbytes 页数：4 Pages

CDIL

Surface mount Si-Epitaxial PlanarTransistors

Switching Transistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

文件：181.78 Kbytes 页数：2 Pages

DIOTEC

德欧泰克