N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 200 Volt VDS * RDS(on)=23Ω

文件：20.34 Kbytes 页数：1 Pages

ZETEX

Qualified to AEC-Q101 Standards for High Reliability

Features • BVDSS > 200V • RDS(ON) ≤ 23Ω @ VGS= 2.6V • ID = 120mA Maximum Continuous Drain Current • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability

文件：658.45 Kbytes 页数：5 Pages

DIODES

美台半导体

Qualified to AEC-Q101 Standards for High Reliability

Features • BVDSS > 200V • RDS(ON) ≤ 23Ω @ VGS= 2.6V • ID = 120mA Maximum Continuous Drain Current • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability

文件：658.45 Kbytes 页数：5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 200 Volt VDS * RDS(on)=28Ω

文件：50.94 Kbytes 页数：3 Pages

ZETEX

Small Signal MOSFET 250 mAmps, 200 Volts

Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features • Pb−Free Package is Available*

文件：52.4 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts

Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features • Pb−Free Package is Available*

文件：52.4 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level

Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. Features • Low Dr

文件：50.31 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed

文件：56.77 Kbytes 页数：8 Pages

PHI

PHI

200 VOLTS N-CHANNEL TMOS POWER FET LOGIC LEVEL

Logic Level TMOS N–Channel Enhancement Mode This TMOS FET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. • Low Drive Requirement, VGS = 3

文件：58.88 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

DMOS Transistors (N-Channel)

FEATURES ♦ High breakdown voltage ♦ High input impedance ♦ Low gate threshold voltage ♦ Low drain-source ON resistance ♦ High-speed switching ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No thermal runaway ♦ No secondary breakdown ♦ Specially sui

文件：227.58 Kbytes 页数：5 Pages

GE