NON-INSULATED BUTT SPLICE

文件：79.19 Kbytes 页数：1 Pages

PANDUIT

丝印：BS107A；Package：TO-92；Small Signal MOSFET 250 mA, 200 V, N−Channel TO−92

Features • AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device*

文件：61.72 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

100 Watt DC-DC Converters

Wide input voltage ranges from 8...385 V DC 1 or 2 isolated outputs up to 48 VDC 4 kV AC I/O electric strengh test voltage • Rugged electrical and mechanical design • Fully isolated outputs • Operating ambient temperature range –40...71°C with convection cooling

文件：147.39 Kbytes 页数：4 Pages

POWER-ONE

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

SIPMOS® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V

文件：77.84 Kbytes 页数：7 Pages

SIEMENS

西门子

TMOS Switching(N-Channel-Enhancement)

TMOS Switching N–Channel — Enhancement

文件：76.19 Kbytes 页数：4 Pages

Motorola

摩托罗拉

N-Channel Enhancement-Mode MOS Transistors

文件：109.43 Kbytes 页数：4 Pages

Temic

Small Signal MOSFET 250 mA, 200 V, N−Channel TO−92

Features • AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device*

文件：61.72 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

文件：65.099 Kbytes 页数：12 Pages

PHI

飞利浦

N-CHANNEL ENHANCEMENT MODE TRANSISTOR

Features • High Breakdown Voltage • High Input Impedance • Fast Switching Speed • Specially Suited for Telephone Subsets

文件：61.91 Kbytes 页数：2 Pages

DIODES

美台半导体

Small Signal MOSFET 250 mAmps, 200 Volts

Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features • Pb−Free Package is Available*

文件：52.4 Kbytes 页数：8 Pages

ONSEMI

安森美半导体