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N-CHANNELMOSFETinaSOT-23PlasticPackage

Descriptions N-CHANNELMOSFETinaSOT-23PlasticPackage. Features HighdensitycelldesignforextremelylowRDS(ON). Applications ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.

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N-CHANNELENHANCEMENTMODEMOSFET

Description TheseN-Channelenhancementmodefieldeffecttransistorsusesadvancedtrenchtechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Theseproductsareparticularlysuitedforlowvoltage,lowcurr

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SIPMOS??Small-Signal-TransistorFeature

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N-CHANNELPOWERMOSFET

FEATURE ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteand ControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable.

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N-channelTrenchMOStransistor

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NChannelMOSFET

NChannelMOSFET FEATURE ●SurfaceMountPackage ●HighDensityCellDesignforExtremelyLowRDS(ON) ●VoltageControlledSmallSignalSwitch ●RuggedandReliable APPLICATION ●SmallServoMotorControls ●PowerMOSFETGateDrivers ●SwitchingApplication

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N-ChannelEnhancementModeFieldEffectTransistor

ProductSummary ●VDS100V ●ID200mA ●RDS(ON)(atVGS=10V)

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N-ChannelEnhancementModeFieldEffectTramsistor

Features •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •HighDrain-SourceVoltageRating

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N-ChannelMOSFET

Features ●VDS(V)=100V ●ID=0.17A(VGS=10V) ●RDS(ON)

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N-ChannelEnhancementModePowerMOSFET

FEATURE ●Pb-FreePackageisavailable.