BRA123ECM

PNP Built-in Resistor Transistor CMPAK Series Inverter, Driver, Switching

Features •Built–inResistorType •SimplifiesCircuitDesign •ReducesBoardSpace •ComplementarypairwithBRC144ECMseries

BRA123EMP

PNPBuilt-inResistorTransistorMPAKSeriesInverter,Driver,Switching

Features •Built–inResistorType •SimplifiesCircuitDesign •ReducesBoardSpace •ComplementarypairwithBRC144EMPseries

BRA123ETP

PNPBuilt-inResistorTransistorTO-92SeriesInverter,Driver,Switching

Features •Built–inResistorType •SimplifiesCircuitDesign •ReducesBoardSpace •ComplementarypairwithBRC144ETPseries

BRC123ECM

NPNBuilt-inResistorTransistorCMPAKSeriesInverter,Driver,Switching

BS123

DMOSTransistors(N-Channel)

FEATURES ♦Highinputimpedance ♦Lowgatethresholdvoltage ♦Lowdrain-sourceONresistance ♦High-speedswitching ♦Nominoritycarrierstoragetime ♦CMOSlogiccompatibleinput ♦Nothermalrunaway ♦Nosecondarybreakdown

BSP123

SIPMOSSmall-SignalTransistor(NchannelEnhancementmodeLogicLevel)

•Nchannel •Enhancementmode •LogicLevel •VGS(th)=0.8...2.0V

BSP123

SIPMOSSmall-Signal-Transistor

Feature •N-Channel •Enhancementmode •LogicLevel •dv/dtrated •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoAECQ101

BSP123

SIPMOSSmall-Signal-Transistor

BSS123

N-channelenhancementmodeverticalD-MOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effecttransistorinaplasticenvelopeusing’trench’technology. TheBSS123issuppliedintheSOT23subminiaturesurfacemountingpackage. FEATURES •’Trench’technology •Extremelyfastswitching •Logiclevelcompatible •Subminiatur

BSS123

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

SOT23N-CHANNELENHANCEMENTMODEVERTICALDMOSFET